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Abstract #0599

RF Power Deposition and ""g-factor"" in Parallel Transmit

Zhu Y
GE Global Research Center

The departure from the standard practice of striving for B1 homogeneity provides parallel excitation with a unique leverage to ameliorate some of the issues that are especially prominent at high B0 strength, including excitation profile-uniformity degradation and high specific absorption rate (SAR). To further advance the new excitation technology, we developed a fast method for calculating SAR-minimized RF pulses given a target excitation profile, introduced parallel excitation g-factor, and established an analysis framework that can be potentially useful guiding transmit array designs and establishing the ultimate intrinsic SAR in parallel transmit.