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Abstract #1355

RF Field Enhancement at 0.5T to 1.5T with Ultra High Dielectric Constant Material (uHDC)

Christopher Sica 1 , Sebastian Rupprecht 1 , Wei Luo 2 , Raffi Sahul 3 , Seongtae Kwon 3 , Michael Lanagan 2 , and Qing Yang 1,4

1 Radiology, Penn State College of Medicine, Hershey, Pennsylvania, United States, 2 Engineering Science and Mechanics, Penn State University, Pennsylvania, United States, 3 TRS Technologies, State College, Pennsylvania, United States, 4 Neurosurgery, Penn State College of Medicine, Hershey, Pennsylvania, United States

Previous studies have established the benefits offered by dielectric materials at 3T and 7T, including reduced B1+ inhomogeneity and SAR, and increased transmit efficiency and SNR. We explored the application of dielectrics to field strengths of 1.5T and below. Utilizing simulation, the effects of ultra high dielectric constant material (up to ╬Ár = 28000) were examined with a block of uHDC material within a phantom at 0.5T, 1T, 1.5T, and 3T. We demonstrated a 2 to 3-fold enhancement in B1 at all field strengths studied, and that lower fields require higher permittivity for enhancement. Experimental results are presented at 1.5 and 3T utilizing available uHDC materials. lower case Greek epsilon

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