Abstract #0855
Q-spoiling method using depletion mode Gallium Nitride (GaN) HEMT devices at 1.5T
Jonathan Y Lu 1 , Kamal Aggarwal 1 , Thomas Grafendorfer 2 , Fraser Robb 3 , John M Pauly 1 , and Greig C Scott 1
1
Electrical Engineering, Stanford University,
Stanford, CA, United States,
2
Advanced
Coils, GEHC Coils, Stanford, CA, United States,
3
GE
Healthcare, Aurora, OH, United States
We demonstrate a novel Q-spoiling method using a
depletion mode Gallium Nitride (GaN) HEMT device. This
device, when unbiased, ideally acts as a short and when
biased with a negative gate-to-source voltage acts as an
open switch. Using this device, we constructed a coil
that is Q-spoiled when unpowered and at resonance with
an applied gate to source voltage. Compared with the
conventional Q-spoiling method using a PIN diode, the
new circuit requires less power and yields comparable
SNR coil measurements. In addition, the default
Q-spoiled state allows greater safety benefits, and
easier decoupling with multiple coils.
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