Meeting Banner
Abstract #0496

A High-Speed, High Power T/R Switching Frontend

David Otto Brunner1, Lukas Furrer2, Markus Weiger1, Werner Baumberger2, Thomas Schmid1, Jonas Reber1, Benjamin Emanuel Dietrich1, Bertram Jakob Wilm1,3, Romain Froidevaux1, and Klaas Paul Pruessmann1

1Institute for Biomedical Engineering, University of Zurich and ETH Zurich, Zurich, Switzerland, 2ZSN Center for Signal Processing and Communications, University of Applied Sciences Winterthur, Winterthur, Switzerland, 3Skope Magnetic Resonance Technologies, Zurich, Switzerland

Dead-times after the excitation pulse of the order of 1 ┬Ás are required for imaging approaches for short T2 compounds such as UTE, ZTE or SWIFT. Here we present a multi-channel T/R interface box employing symmetrically biased T/R switches which, in conjunction with a novel diode driver, provide signal rise times of 350 ns. The unit further comprises fiber-optic triggering, biasing, and malfunction detection. Its performance is demonstrated by low artefact ZTE scans with 500 kHz at 7T.

This abstract and the presentation materials are available to members only; a login is required.

Join Here