High Powered GaN HEMT devices for Low Powered Q-spoiling at 3T MRI
Jonathan Y Lu1, Thomas Grafendorfer2, Tao Zhang1, Kamal Aggarwal1, Fraser Robb3, John M Pauly1, and Greig C Scott1
1Electrical Engineering, Stanford University, Stanford, CA, United States, 2Advanced Coils, GEHC Coils, Stanford, CA, United States, 3GE Healthcare, Aurora, OH, United States
We examine different power depletion
mode GaN HEMT devices for use in low power MRI Q-spoiling at 3T. These devices
range in their on-resistance and off-capacitance, yielding different blocking
impedances. We prototyped FET based Q-spoiling surface coils and compared SNR
performances with conventional PIN diode Q-spoiling coils. Our coils enable Q-spoiling
when unpowered providing a good safety feature. We tested the robustness of the
FET devices in the coils by running fast spin echo sequences at 3T. The SNR
performances of our FET based coils are comparable with conventional PIN diode
coils without the high current draw.
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