Developments in RF transmit systems have been trending towards increasing independent elements and compact designs. Previous work has shown the capability of enhancement mode Gallium Nitride (eGaN) FETs in high-efficiency switchmode RF amplifier (RFPA) based on envelope elimination and restoration (EER). Switchmode RF amplifiers, however, suffer from nonlinearity and limited dynamic range, leading to errors in excitation profiles. Here we present preliminary results on a new prototype which adds an additional modulation methods using digital controls to increase RFPA dynamic range.
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