Robert Caverly1, William E. Doherty2, Ronald Watkins3
1Villanova University, Villanova, PA, USA; 2Microsemi-Lowell, USA; 3Department of Radiology, Stanford University, USA
A new model for PIN diodes used in MR scanners is presented and is applicable for devices used in higher field 7T, 9.4T and 11.7T scanners as well as both transmit control in high RF power MR scanners and passive blocking and detune functions. The model has been shown to accurately predict the operation of ULM diodes in these applications and is fully compatible with industry-standard simulators such as SPICE as well as it variants.
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