Abstract #0926
Enhancement Mode GaN on Silicon (eGaN FETs) for Coil Detuning
Michael Twieg 1 , Matthew J Riffe 2 , Michael de Rooij 3 , and Mark A Griswold 1,4
1
Dept. of Electrical Engineering and Computer
Science, Case Western Reserve University, Cleveland, OH,
United States,
2
Dept.
of Biomedical Engineering, Case Western Reserve
University, Cleveland, OH, United States,
3
Efficient
Power Conversion Corporation, El Segundo, CA, United
States,
4
Dept. of Radiology, Case Western
Reserve University, Cleveland, OH, United States
We present the first use of enhancement mode Gallium
Nitride on Silicon (eGaN FETs) for active detuning of RF
receive coils. Experiments demonstrate that the eGaN FET
method was superior to PIN diodes in the detuned state,
while image SNR during the receive state suffered a
slight penalty. Additionally, we show that the eGaN FETs
require orders of magnitude less bias current and power
than PIN diodes to operate. Our results show that eGaN
FETs present advantages over PIN diodes for patient
safety and for B0 and B1 distortion, while preserving
the performance of the RF coil.
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