RF Field Enhancement at 0.5T to 1.5T with Ultra High Dielectric Constant Material (uHDC)
Christopher Sica 1 , Sebastian Rupprecht 1 , Wei Luo 2 , Raffi Sahul 3 , Seongtae Kwon 3 , Michael Lanagan 2 , and Qing Yang 1,4
Radiology, Penn State College of Medicine,
Hershey, Pennsylvania, United States,
Science and Mechanics, Penn State University,
Pennsylvania, United States,
Technologies, State College, Pennsylvania, United
Penn State College of Medicine, Hershey, Pennsylvania,
Previous studies have established the benefits offered
by dielectric materials at 3T and 7T, including reduced
B1+ inhomogeneity and SAR, and increased transmit
efficiency and SNR. We explored the application of
dielectrics to field strengths of 1.5T and below.
Utilizing simulation, the effects of ultra high
dielectric constant material (up to εr = 28000) were
examined with a block of uHDC material within a phantom
at 0.5T, 1T, 1.5T, and 3T. We demonstrated a 2 to 3-fold
enhancement in B1 at all field strengths studied, and
that lower fields require higher permittivity for
enhancement. Experimental results are presented at 1.5
and 3T utilizing available uHDC materials.
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