Abstract #0496

A High-Speed, High Power T/R Switching Frontend

David Otto Brunner¹, Lukas Furrer², Markus Weiger¹, Werner Baumberger², Thomas Schmid¹, Jonas Reber¹, Benjamin Emanuel Dietrich¹, Bertram Jakob Wilm^1,3, Romain Froidevaux¹, and Klaas Paul Pruessmann¹

¹Institute for Biomedical Engineering, University of Zurich and ETH Zurich, Zurich, Switzerland, ²ZSN Center for Signal Processing and Communications, University of Applied Sciences Winterthur, Winterthur, Switzerland, ³Skope Magnetic Resonance Technologies, Zurich, Switzerland

Dead-times after the excitation pulse of the order of 1 µs are required for imaging approaches for short T₂ compounds such as UTE, ZTE or SWIFT. Here we present a multi-channel T/R interface box employing symmetrically biased T/R switches which, in conjunction with a novel diode driver, provide signal rise times of 350 ns. The unit further comprises fiber-optic triggering, biasing, and malfunction detection. Its performance is demonstrated by low artefact ZTE scans with 500 kHz at 7T.

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