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Abstract #2630

Investigation of RF-induced heating of distal radius implant system

Mikhail Kozlov1,2 and Gregor Schaefers1,3

1MR:comp GmbH, Gelsenkirchen, Germany, 2Max Planck Institute for Human Cognitive and Brain Sciences, Leipzig, Germany, 3MRI-STaR GmbH, Gelsenkirchen, Germany

At 64 and 127.7 MHz RF-induced heating on or near nine distal radius implant systems was investigated. The 3-D temperature distribution after 15 minutes continuous excitation was obtained for a plane wave incident field. For one implant, random trials followed by a gradient-based investigation revealed three screw configurations that resulted in a high maximum temperature rise. Due to the smooth outcome of random trials followed by a gradient analysis, even relatively small simulation numbers allowed to reveal the configuration with the highest temperature rise for a given incident electrical field.

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