In the present study, we used both numerical simulations and experiments performed in a preclinical setup to characterize the mechanisms of the ihMT boost effect (signal enhancement achieved using concentrated bursts of high-power RF for saturation). We demonstrated that the ihMT boost effect depends on T1D and is more intense in short-T1D components. This feature allowed, using various strategies for dual frequency-offset RF saturation, different ihMT contrasts to be produced and revealed strong ihMT signal outside the brain.
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