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Abstract #0562

Characterizing the sensitivity of ihMT for various dipolar relaxation times (T1D) at high RF power using frequency-alternated and cosine-modulated RF pulses for dual frequency-offset saturation

Guillaume Duhamel1,2, Samira Mchinda1,2, Valentin H. Prevost1,2, Victor Carvalho1,2, Gopal Varma3, David Alsop3, and Olivier M. Girard1,2

1Aix-Marseille Univ, CNRS, CRMBM, Marseille, France, 2APHM, Hôpital Universitaire Timone, CEMEREM, Marseille, France, 3Radiology, Division of MR Research, Beth Israel Deaconess Medical Center, Harvard Medical Schooll, Boston, MA, United States

In the present study, we used both numerical simulations and experiments performed in a preclinical setup to characterize the mechanisms of the ihMT boost effect (signal enhancement achieved using concentrated bursts of high-power RF for saturation). We demonstrated that the ihMT boost effect depends on T1D and is more intense in short-T1D components. This feature allowed, using various strategies for dual frequency-offset RF saturation, different ihMT contrasts to be produced and revealed strong ihMT signal outside the brain.

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