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Abstract #1470

Comparison of RF Induced Device Heating at 0.35T and 1.5T

Jessica A. Martinez1,2, Kévin Moulin1, Yu Gao1, Peng Hu1, and Daniel B. Ennis1,2

1Radiological Sciences, UCLA, Los Angeles, CA, United States, 2Bioengineering, UCLA, Los Angeles, CA, United States

RF induced heating is a safety concern for patients with implanted electronic devices (IEDs). At lower field strengths (0.35T) heating is expected to be lower than at higher field strengths (1.5T). However, little experimental data has been acquired at field strengths below 1.5T. The purpose of this work is to compare the effects of field strength on RF induced heating by applying the same RF power in a metallic rod at 0.35T and 1.5T. We found that heating was substantially lower at 0.35T than 1.5T, which may be substantially beneficial for patients with IEDs.

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