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Abstract #4074

Power to temperature conversion of AIMD under RF exposure

Aiping Yao1,2, Earl Zastrow1, and Niels Kuster1,2

1IT'IS Foundation, Zurich, Switzerland, 2ETH Zurich, Zurich, Switzerland

Determining the local tissue temperature rise caused by the RF-induced deposition of an active implantable medical device (AIMD) requires a conversion between localized power deposition to temperature (p2∆T). We investigate the quasi-static limit by which both the distributions of power and temperature are assumed to depend only on the electrode geometry (when electrically small) and independent of the current distribution along the AIMD’s wire conductor. The results confirm that p2∆T conversion can be derived without the knowledge of incident conditions to the AIMD and complete geometry of the AIMD. The relationship between p2∆T and the electrode physical geometries is summarized.

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