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Abstract #1407

Gallium nitride MOSFETs enable transmit-receive switching in less than 100ns

Christoph Michael Schildknecht1, Markus Weiger1, Romain Froidevaux1, and Klaas Paul Pruessmann1
1Institute for Biomedical Engineering, ETH Zurich and University of Zurich, Z├╝rich, Switzerland

For short-T2 MRI measurements, fast T/R switches that can handle high RF power are of paramount importance. In this work, we present a T/R switch based on GaN MOSFETs that switches in tens of nanoseconds and can handle a peak power of more than 1000W.

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