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Abstract #2289

Numerical Simulation study on the effects of intentionally inhomogeneous E-field distributions on RF-induced heating of implants

Vincent Hammersen1, Finya Ketelsen1, Andreas Rennings2, and Gregor Schaefers1,3
1MRI-STaR Magnetic Resonance Institute for Safety Technology and Research GmbH, Gelsenkirchen, Germany, 2General and Theoretical Electrical Engineering (ATE), University of Duisburg-Essen, Duisburg, Germany, 3MR:comp GmbH, Gelsenkirchen, Germany

RF-induced heating of implants is strongly dependent on the E-Field magnitude at the test location, which is why a universal ±1dB and ±20° phase shift target field value limit is applied. We used numerical simulation to vary the exposing E-Fields, while keeping a constant average E-field magnitude at the test location. Strong deviations in heating development could be observed. In a second step we added phase shifts between exposition sources.

The results suggest that, in addition to the limits, the exact field distribution especially the E-field directions should also be taken into account in critical inhomogeneous cases.

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