Meeting Banner
Abstract #3092

Design and Implementation of High Switching Frequency Gradient Power Amplifier Using eGaN Devices

Soheil Taraghinia1, Volkan Acikel2, Reza Babaloo1,3, and Ergin Atalar1,3
1UMRAM, Bilkent University, Ankara, Turkey, 2Aselsan A.S., Ankara, Turkey, 3Electrical and Electronics Engineering, Bilkent University, Ankara, Turkey

In this work, a switching H-bridge gradient power amplifier utilizing eGaN devices is implemented. A single-stage 150 V/ 50 A full-bridge GPA for an insert gradient array system at 1 MHz effective switching frequency is fabricated and tested. Pulse width modulation signals are generated digitally using a Virtex 7 family FPGA board. A single-stage LC low pass filter is designed to attenuate the ripple current.

How to access this content:

For one year after publication, abstracts and videos are only open to registrants of this annual meeting. Registrants should use their existing login information. Non-registrant access can be purchased via the ISMRM E-Library.

After one year, current ISMRM & ISMRT members get free access to both the abstracts and videos. Non-members and non-registrants must purchase access via the ISMRM E-Library.

After two years, the meeting proceedings (abstracts) are opened to the public and require no login information. Videos remain behind password for access by members, registrants and E-Library customers.

Click here for more information on becoming a member.

Keywords