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Abstract #2260

Studying the influence of cryogenic cooling and B0 alignment on Si PIN diode operation in active decoupling circuits

Wenjun Wang1, Vitaliy Zhurbenko1, Juan Diego Sánchez Heredia2, and Jan Henrik Ardenkjær Larsen2
1Department of Electrical Engineering, Technical University of Denmark, Kongens Lyngby, Denmark, 2Department of Health Technology, Technical University of Denmark, Kongens Lyngby, Denmark


Si diodes can require elevated forward bias voltage to achieve sufficient forward bias current when they are placed in a strong static magnetic field B0 at cryogenic temperatures. This may disrupt active decoupling circuit operation in cryogenic MRI coils. Diodes may still operate if aligned in a certain way with the B0 field, which is studied in this work.

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