Abstract #4547

Monitoring performance of a GaN HEMT switch across different magnetic field strengths for implementation of On-Coil Tx Amplifiers

Brett Setera^1,2, Aristos Christou², and Natalia Gudino¹

¹Laboratory of Functional and Molecular Imaging, National Institutes of Health, Bethesda, MD, United States, ²Department of Materials Science & Engineering, University of Maryland, College Park, MD, United States

Synopsis

Keywords: New Devices, New Devices, Radiofrequency TechnologyWe present a method for monitoring multiple GaN HEMT device signals at different orientations with B₀ during RF switching to determine possible magnetic field impacts on device performance and assist the development of an optimized GaN based device for on-coil amplification. Reduction in output current with increased magnetic field strength were not detected and device orientation did not impact signal amplitude.

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