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Abstract #0786

Built-in RF safety for active implants: Harnessing impedance measurements from a commercial deep brain stimulator

Berk Silemek1, Mevlüt Yalaz2, Frank Seifert1, Reiner Montag1, Michael Höft2, Bernd Ittermann1, and Lukas Winter1
1Physikalisch-Technische Bundesanstalt (PTB), Braunschweig and Berlin, Germany, 2Chair of Microwave Engineering, Christian-Albrechts-Universität zu Kiel, Kiel, Germany

Synopsis

Keywords: Safety, Safety, Deep brain stimulation, Active implantable medical devices, RF safety

Motivation: MRI of neurostimulators is severely constrained due to RF safety concerns.

Goal(s): Demonstrate that built-in sensors in commercial devices, such as a deep brain stimulator, can provide all necessary information to detect and improve RF safety.

Approach: We investigated and utilized built-in impedance measurements of two commercial DBS systems for the detection and mitigation of RF-induced currents on the electrodes of a DBS lead.

Results: Impedance measurements were correlated at various RF power levels. Temperature rise at the tip of DBS electrodes could be reduced to 0.02 K from 17.14 K at the same total powers (16.85±0.45 W).

Impact: Our demonstration of mitigation of RF-induced heating in active implants through built-in sensor measurements from a commercial DBS system indicated up to ~850× improvement in temperature rise proving the unmet value of sensors for MR imaging patients with active implants.

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