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Abstract #0922

High-Power T/R Switches with 350 ns Rise Time for Zero Echo Time Imaging

David Otto Brunner 1 , Markus Weiger 1 , Thomas Schmid 1 , and Klaas Paul Pruessmann 1

1 Institute for Biomedical Engineering, University and ETH Zurich, Zurich, Switzerland

TR switches with very short transients have become crucial for the application of high bandwidth, ultra-short T 2 * imaging techniques such as UTE, SWIFT or ZTE. However, to speed-up the switching of inherently slow PIN diodes comparably high reverse voltages and switching currents have to be applied. This in turn can produce so high spikes on the RF lines that the preamplifier shows significant recovery transients. In this work we show a novel TR switch topology based on a double balanced biasing scheme which allows inherently decoupling the RF lines and the biasing signals and removing all major choke inductances from the bias lines.

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