High-Power T/R Switches with 350 ns Rise Time for Zero Echo Time Imaging

TR switches with very short transients have become crucial for the application of high bandwidth, ultra-short T ₂ ^* imaging techniques such as UTE, SWIFT or ZTE. However, to speed-up the switching of inherently slow PIN diodes comparably high reverse voltages and switching currents have to be applied. This in turn can produce so high spikes on the RF lines that the preamplifier shows significant recovery transients. In this work we show a novel TR switch topology based on a double balanced biasing scheme which allows inherently decoupling the RF lines and the biasing signals and removing all major choke inductances from the bias lines.

How to access this content:

For one year after publication, abstracts and videos are only open to registrants of this annual meeting. Registrants should use their existing login information. Non-registrant access can be purchased via the ISMRM E-Library.

After one year, current ISMRM & ISMRT members get free access to both the abstracts and videos. Non-members and non-registrants must purchase access via the ISMRM E-Library.

After two years, the meeting proceedings (abstracts) are opened to the public and require no login information. Videos remain behind password for access by members, registrants and E-Library customers.

Click here for more information on becoming a member.