Abstract #2175

High Powered GaN HEMT devices for Low Powered Q-spoiling at 3T MRI

Jonathan Y Lu¹, Thomas Grafendorfer², Tao Zhang¹, Kamal Aggarwal¹, Fraser Robb³, John M Pauly¹, and Greig C Scott¹

¹Electrical Engineering, Stanford University, Stanford, CA, United States, ²Advanced Coils, GEHC Coils, Stanford, CA, United States, ³GE Healthcare, Aurora, OH, United States

We examine different power depletion mode GaN HEMT devices for use in low power MRI Q-spoiling at 3T. These devices range in their on-resistance and off-capacitance, yielding different blocking impedances. We prototyped FET based Q-spoiling surface coils and compared SNR performances with conventional PIN diode Q-spoiling coils. Our coils enable Q-spoiling when unpowered providing a good safety feature. We tested the robustness of the FET devices in the coils by running fast spin echo sequences at 3T. The SNR performances of our FET based coils are comparable with conventional PIN diode coils without the high current draw.

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