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Abstract #3765

On the boost effect of inhomogeneous Magnetization Transfer (ihMT)

Valentin H Prevost1, Olivier M Girard1, Samira Mchinda1, Gopal Varma2, David C Alsop2, and Guillaume Duhamel1

1Aix Marseille Univ, CNRS, CRMBM, UMR 7339, Marseille, France, 2Division of MR Research, Beth Israel Deaconess Medical Center, Harvard Medical School, Boston, MA, United States

A new implementation of inhomogeneous magnetization transfer (ihMT) has recently been introduced, consisting of concentrating the RF energy deposition within the saturation period and demonstrating a significant boost of the ihMT sensitivity. The boost effect has been characterized in this study among different ihMT sequences, species and field strengths and reveals common features. The optimal sequence settings vary with the number of consecutive MT pulses and are presumably related to the timescale of the underlying T1D components and magnetization exchange rates.

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