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Abstract #0950

Advanced Gradient Driver Design with Silicon Carbide MOSFETs

Ruxi Wang1, Juan Sabate1, Viswanathan Kanakasabai2, Yash Singh3, Jayanti Ganesh2, and Huan Hu3

1GE Global Research Center, Niskayuna, NY, United States, 2GE Global Research, Bangalore, India, 3GE Global Research, Niskayuna, NY, United States

In a MRI system, gradient driver is a switching power supply which is composed of power semiconductor devices, such as insulated gate bipolar transistors (IGBTs), power metal oxide semiconductor field effect transistor (MOSFET), etc. To control an electrical power that can be transferred by the gradient driver, the power semiconductor devices are usually operated in a pulse width modulation (PWM) method with high voltage, high current and high switching frequency [1-4]. With advanced semiconductor devices like silicon carbide devices, each module could sustain higher voltage which will simplify the power supply architecture. Meanwhile, the fast switching capability of Silicon Carbide (SiC) devices make the gradient amplifier more efficient than silicon version. This paper presented a high performance modular solution gradient amplifier system with advanced wide-band gap SiC devices. Image test with the advanced gradient driver was demonstrated in this paper.

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