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Abstract #1329

Keeping a Low (Temperature) Profile: An Analysis of In Vivo RF Heating of Vagus Nerve Stimulation Devices in Low (0.55 T) vs. High-Field (1.5 T) MRI

Pia Sanpitak1, Bhumi Bhusal2, Julie Pilitsis3, Nicole Seiberlich4, Fuchang Jiang1, Tayeb Zaidi1, and Laleh Golestanirad1,2
1Biomedical Engineering, Northwestern University, Evanston, IL, United States, 2Radiology, Northwestern University, Chicago, IL, United States, 3Neurosurgery, The University of Arizona, Tucson, AZ, United States, 4University of Michigan, Ann Arbor, MI, United States

Synopsis

Keywords: Safety, Safety

Motivation: The growing accessibility of low-field MRI systems and the lack of scanning guidelines for VNS devices in these systems highlight a need to assess RF heating risks.

Goal(s): To compare the predicted RF-induced heating of a VNS device at 0.55 T and 1.5 T MRI, providing insights for safe scanning practices.

Approach: We measured the transfer function of a commercial VNS device and used it to simulate in vivo heating at 0.55 T and 1.5 T, varying landmark and B1+ values.

Results: Predictions suggest that RF heating at 0.55 T can be comparable to that at 1.5 T.

Impact: This study challenges the common belief that low-field MRI is inherently safer for patients with implants, demonstrating that RF heating at 0.55 T can be similar to or exceed that at 1.5 T, underscoring the need for careful patient assessment.

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Keywords