Effect of doping on the dynamic nuclear polarization of porous silicon nanoparticles
Konstantin Tamarov1, Gevin von Witte2,3, Viivi Hyppönen4, Jiri Jäntti1, Aaron Himmler3, Mohammed Albannay2, Matthias Ernst3, Sebastian Kozerke2, Vesa-Pekka Lehto1, Joakim Riikonen1, and Mikko I Kettunen4
1Department of Applied Physics, University of Eastern Finland, Kuopio, Finland, 2Institute for Biomedical Engineering, ETH Zurich, Zurich, Switzerland, 3Laboratory of Physical Chemistry, ETH Zurich, Zurich, Switzerland, 4A.I. Virtanen Institute, University of Eastern Finland, Kuopio, Finland
Porous Si nanoparticles (NPs) with different doping degree were prepared using low-load metal assisted catalytic etching and subjected to dynamic nuclear polarization at 3.4 T and 6.7 T. Thermal oxidation of Si was applied to form paramagnetic centers of dangling bond type in Si/SiO2 interface, which were used to polarize 29Si nuclei. The doping significantly affected the gained polarization and buildup times: high doping degree generally led to lower and faster polarization compared to the low doping. On the other hand, slight p-type or n-type doping was necessary to achieve the highest polarization of about 11 %.
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