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Abstract #3327

GaN HEMT decoupling circuit for MR receive coil

Limin Feng1, Lalitkumar Rai1, Greig C. Scott2, and Fraser Robb1
1GE Healthcare, Aurora, OH, United States, 2Stanford University, Stanford, CA, United States

Synopsis

Keywords: Non-Array RF Coils, Antennas & Waveguides, Non-Array RF Coils, Antennas & Waveguides, Decoupling Circuit

Motivation: Low-power circuits are key to miniaturizing MR receive coil electronics for improved flexibility and reduced weight. GaN HEMT decoupling circuits offer a promising alternative to PIN diodes.

Goal(s): This research evaluates GaN HEMT decoupling circuits, comparing them to traditional PIN diode circuits, while assessing potential risks and impacts on coil performance.

Approach: Decoupling performance of GaN HEMTs from two manufacturers was tested under RF power, along with Hall Effect and switching time evaluations in MRI systems.

Results: Current GaN HEMTs can't handle high RF currents like PIN diodes. A parallel passive diode is needed for protection and enhanced decoupling performance.

Impact: This research identifies the limitations of existing GaN HEMTs in MR receive coil decoupling circuits. It proposes a hybrid decoupling circuit that integrates GaN HEMTs with passive switching diodes to achieve low-power decoupling in receive coils.

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